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TwinMOS 8GB DDR3 1600Mhz Memory Modules for Laptops

QAR 249

Availability:

In stock

SKU : RAM-DES-TWN-8GB-D3-1600MHz

  • 1.5V center-terminated push/pull I/O
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS READ latency (CL)
  • Posted CAS additive latency (AL)
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Programmable CAS latency
  • 1.5V center-terminated push/pull I/O
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS READ latency (CL)
  • Posted CAS additive latency (AL)
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Programmable CAS latency

QAR 249

In stock

Order By Call
Brand TwinMOS
Module Specification  204Pin Unbuffered SO-DIMM
Capacity 8GB
Data Transfer Bandwidth 12800MB/sec (DDR3-1600)
CL-value 7-7-7-20
PCB Structure  6-layer PCB
Working voltage 1.5V
  • VDD = VDDQ = 1.5V ±0.075V
  • 1.5V center-terminated push/pull I/O
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS READ latency (CL)
  • Posted CAS additive latency (AL)
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Programmable CAS latency
SKU: RAM-DES-TWN-8GB-D3-1600MHz Categories: , ,

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